US 2017/0324033 A1 · DIFFUSED RESISTIVE MEMORY CELL WITH BURIED ACTIVE ZONE

Abstract

An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.

Claims30

Dependent claims

A ReRAM device, comprising:

a first contact;
a second contact;
and
an active layer disposed between the first contact and the second contact, wherein the active layer comprises:
a diffused zone adjacent the first contact, wherein the diffused zone has a first composition;
and
an active zone disposed between the diffused zone and the second contact, wherein the active zone has a second composition different from the first composition of the diffused zone.

4 more elements

Dependencies are inferred from the claim text.

Diffused resistive memory cell with buried active zone

Life of this patent

Diffused resistive memory cell with buried active zone

Life of this patent

Abstract

Claims30