Method, system, and device for l-shaped memory component
AssigneeMicron Technology, Inc.
InventorsFabio Pellizzer, Innocenzo Tortorelli
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein may relate to forming reduced size storage components in a cross-point memory array. In an embodiment, a storage cell comprising an L-shaped storage component having an approximately vertical portion extending from a first electrode positioned below the storage material to a second electrode positioned above and/or on the storage component. A storage cell may further comprise a selector material positioned above and/or on the second electrode and a third electrode positioned above and/or on the selector material, wherein the approximately vertical portion of the L-shaped storage component comprises a reduced size storage component in a first dimension.
Claims21
(canceled)
A memory device, comprising:
- a storage cell comprising an L-shaped storage component having an first portion extending from a first electrode positioned below the L-shaped storage component to a second electrode positioned above or on the L-shaped storage component, the storage cell further comprising a selector material positioned above or on the second electrode and a third electrode positioned above or on the selector material, wherein the first portion of the L-shaped storage component comprises a reduced size storage component in a first dimension.
A memory device, comprising:
- a first trench formed in a dielectric material, the first trench extending in a first direction and;
- a second trench formed in the dielectric material, the second trench extending in a second direction orthogonal to the first direction;
- one or more storage components positioned along the first direction in the first trench;
- a first electrode material positioned over the one or more storage components;
- a third trench extending in the first direction through the first electrode material;
- a plurality of electrodes positioned along the first direction in the third trench;
- and
- a fourth trench extending in the second direction through the first electrode material and through at least a portion of the dielectric material.
A memory device, comprising:
- a first trench formed in a dielectric material, the first trench extending in a first direction;
- a plurality of second trenches formed in the dielectric material, each of the plurality of second trenches extending in a second direction different than the first direction;
- a plurality of storage components positioned along the first direction in the first trench;
- a first electrode material positioned over each of the plurality of storage components;
- a plurality of third trenches extending in the first direction through the first electrode material;
- a plurality of electrodes positioned along the first direction in each of the plurality of third trenches;
- a plurality of fourth trenches extending in the second direction through the first electrode material and at through least a portion of the dielectric material;
- and
- a processor in electronic communication with each of the plurality of storage components, wherein the processor is operable to:
- transmit a memory access command to each of the plurality of storage components;
- and
- access each of the plurality of storage components in response to the memory access command.
Dependencies are inferred from the claim text.