Magnetic random access memory devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyu-Man HWANG, Shi-Jung KIM, Mi-Lim PARK, Jun-Soo BAE, Seung-Woo LEE
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Abstract
Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.
Claims8
A magnetic random access memory (MRAM) device, comprising:
- at least one first magnetic material pattern on a substrate;
- at least one second magnetic material pattern on the at least one first magnetic material pattern;
- and
- at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern, wherein a width of a top surface of the at least one first magnetic material pattern is less than a width of a bottom surface of the at least one second magnetic material pattern.
Dependencies are inferred from the claim text.