Magnetoresistance effect element and magnetic memory

A magnetoresistance effect element, comprising:

• a reference layer made of a ferromagnetic material, the reference layer having an in-plane magnetization direction parallel to a surface of the reference layer;
• a recording layer made of a ferromagnetic material, the recording layer having the in-plane magnetization direction, the recording layer having a shape that has short axis and long axis perpendicular to the short axis in plan view, a first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer being greater than 0.3 and being smaller than 1;
• and
• a barrier layer disposed between the reference layer and the recording layer.