Thermoelectric cooling using through-silicon vias

A structure formed using a substrate having a front side and a back side opposite from the front side, the structure comprising:

• a device level at the front side of the substrate;
• a first thermoelectric couple coupled with the substrate, the first thermoelectric couple including a first through-silicon via extending through the device level and the substrate to the back side of the substrate, a second through-silicon via extending through the device level and the substrate to the back side of the substrate, an n-type thermoelectric pillar coupled with the first through-silicon via, and a p-type thermoelectric pillar coupled with the second through-silicon via;
• and
• a back-end-of-line (BEOL) interconnect structure at the front side of the substrate, the BEOL interconnect structure including a wire that couples the first through-silicon via in series with the second through-silicon via.