Optoelectronic semiconductor chip
AssigneeOSRAM Opto Semiconductors GmbH
InventorsFabian Kopp, Christian Eichinger, Korbinian Perzlmaier
Life of this patent
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Abstract
According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.
Claims19
Optoelectronic semiconductor chip, comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,
- wherein the p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and wherein a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices.
Optoelectronic semiconductor chip, comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,
- wherein the p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and wherein a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices,
- wherein a transparent electrically conductive interlayer is arranged between the p-doped semiconductor layer and the reflection-enhancing dielectric layer sequence, wherein electrical contact between the first connection layer and the transparent electrically conductive interlayer is produced in that the first connection layer encases the reflection-enhancing dielectric layer sequence, and wherein the n-doped semiconductor layer is electrically contacted in that the second connection layer in part directly adjoins the n-doped semiconductor layer.
Optoelectronic semiconductor chip, comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer,
- wherein the p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and wherein a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence comprises a plurality of dielectric layers with different refractive indices,
- wherein a transparent electrically conductive layer is arranged between the first connection layer and the reflection-enhancing dielectric layer sequence, and a transparent electrically conductive interlayer is arranged between the p-doped semiconductor layer and the reflection-enhancing dielectric layer sequence.
Dependencies are inferred from the claim text.