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US 2017/0324001 A1Published application
Light-Emitting Semiconductor Chip
AssigneeOSRAM Opto Semiconductors GmbH
InventorsMatthias Peter, Tobias Meyer, Alexander Walter, Tetsuya Taki, Juergen Off, Rainer Butendeich, Joachim Hertkorn
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Abstract
A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
Claims16
A semiconductor chip comprising:
- a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an n-conductive multilayer structure, a p-conductive semiconductor layer and an active region provided for generating radiation, and wherein the active region is disposed between the n-conductive multilayer structure and the p-conductive semiconductor layer;
- wherein the n-conductive multilayer structure has a doping profile comprising at least one doping peak;
- and
- wherein the n-conductive multilayer structure comprises barrier layers and a quantum structure with a plurality of first quantum layers, wherein the first quantum layers of the plurality of first quantum layers are separated by the barrier layers, wherein the quantum structure comprises a low doped sub-region in which the first quantum layers and the barrier layers are low doped, and wherein the at least one doping peak is disposed between the low doped sub-region and the active region.
1 more element
A method for producing a semiconductor chip, comprising
- forming a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an n-conductive multilayer structure, a p-conductive semiconductor layer and an active region provided for generating radiation, wherein is arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer;
- and
- forming a doping profile in the n-conductive multilayer structure, wherein the doping profile comprises at least one doping peak, and wherein the at least one doping peak is grown with a growth rate of between 20 nm/h and 500 nm/h.
Dependencies are inferred from the claim text.