Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
AssigneeInternational Business Machines Corporation
InventorsRichard A. Haight, James B. Hannon, Satoshi Oida
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Abstract
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
Claims17
A method for forming a back contact on an absorber layer in a photovoltaic device, comprising:
- growing an absorber layer including Cu-Zn-Sn-S(Se) (CZTSSe) over a two dimensional material on a first substrate;
- exfoliating the absorber layer from the two dimensional material to remove the first substrate from a backside of the absorber layer;
- and
- forming a back contact on the absorber layer.
A method for forming a flexible photovoltaic device, comprising:
- forming graphene on a metal coated glass substrate;
- forming an absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over the first substrate on the graphene;
- exfoliating the absorber layer from the graphene to remove the metal coated glass substrate from a backside of the absorber layer;
- cleaning the backside of the absorber layer;
- and
- depositing a back contact on the absorber layer.
Dependencies are inferred from the claim text.