Single-event burnout (seb) hardened power schottky diodes, and methods of making and using the same

A method of forming a power Schottky diode, the method including:

• providing a cathode;
• providing a semiconductor disposed over the cathode, the semiconductor including at least a first region and a second region, the second region defining a guard ring;
• providing an anode disposed over the first region and at least a portion of the guard ring, a junction between the anode and the first region defining a Schottky barrier;
• providing an oxide disposed over the guard ring;
• and
• disposing a resistive material over at least a portion of the guard ring and at least a portion of the oxide so as to inhibit a flow of holes from the guard ring to the anode following a heavy ion strike to the guard ring.

A method including:

• providing a power Schottky diode including:
• a cathode;
• a semiconductor disposed over the cathode, the semiconductor including at least a first region and a second region, the second region defining a guard ring;
• an anode disposed over the first region and at least a portion of the guard ring, the anode including a metal, a junction between the anode and the first defining a Schottky barrier;
• an oxide disposed over the guard ring;
• a resistive material disposed over at least a portion of the guard ring and at least a portion of the oxide;
• and
• inhibiting by the resistive material a flow of holes from the guard ring to the anode following a heavy ion strike to the guard ring.