Semiconductor element, semiconductor device, and method for manufacturing same

A method of manufacturing a semiconductor element provided with a stacked diode structure obtained by stacking a first n-type semiconductor layer, a second semiconductor layer, and a third n-type semiconductor layer in this order from an anode side to a cathode side, the first and second semiconductor layers having a heterojunction,

• wherein the first semiconductor layer is formed of InGaAs,
• the second semiconductor layer is formed of InP, and
• the first semiconductor layer has an electron concentration ne (cm−3) defined by Equation C1;
• ne=1.2×1019−9.5×1018×log(√{square root over (Sj)}) (C1)
• where “Sj (μm2)” denotes an area of the heterojunction.

A semiconductor device comprising:

• an electric connection line that connects an electric high-frequency input circuit and an electric output circuit;
• and
• a semiconductor element provided with a stacked diode structure obtained by stacking a first n-type semiconductor layer, a second semiconductor layer having electron affinity lower than that of the first semiconductor layer, and a third n-type semiconductor layer in this order from an anode side to a cathode side, the first and second semiconductor layers having a heterojunction,
• wherein the semiconductor element being used as a detection circuit for performing detection by inputting a predetermined high-frequency signal between an anode and a cathode,
• wherein a doping concentration of the first semiconductor layer is adjusted such that a detection output current is maximized in a line impedance of a high-frequency signal input side of the detection circuit or a pure resistance antenna impedance, and an input impedance of an amplifier connected to a detection output of the detection circuit, which are given in advance,
• wherein the cathode side is connected to the electric connection line,
• the anode side is connected to the ground, and
• a detection signal obtained by detecting an electric high-frequency wave from the electric high-frequency input circuit is output to the electric output circuit.

A semiconductor device comprising:

• an electric connection line that connects an electric high-frequency input circuit and an electric output circuit;
• and
• a semiconductor element provided with a stacked diode structure obtained by stacking a first n-type semiconductor layer, a second semiconductor layer, and a third n-type semiconductor layer in this order from an anode side to a cathode side, the first and second semiconductor layers having a heterojunction,
• wherein the first semiconductor layer is formed of InGaAs,
• the second semiconductor layer is formed of InP, and
• the first semiconductor layer has an electron concentration ne (cm−3) defined by Equation C1, where “Sj (μm2)” denotes an area of the heterojunction,
• wherein the cathode side is connected to the electric connection line,
• the anode side is connected to the ground, and
• a detection signal obtained by detecting an electric high-frequency wave from the electric high-frequency input circuit is output to the electric output circuit.