Soi wafers and devices with buried stressor
AssigneeAcorn Technologies, Inc.
InventorsPaul A. Clifton, Andreas Goebel
Life of this patent
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Abstract
A semiconductor structure includes a layer arrangement consisting of, in sequence, a semiconductor-on-insulator layer (SOI) over a buried oxide (BOX) layer over a buried stressor (BS) layer with a silicon bonding layer (BL) intervening between the BOX and the BS layers. The semiconductor structure may be created by forming the BS layer on a substrate of a first wafer; growing the BL layer at the surface of the BS layer; wafer bonding the first wafer to a second wafer having a silicon oxide layer formed on a silicon substrate such that the silicon oxide layer of the second wafer is bonded to the BL layer of the first wafer, and thereafter removing a portion of the silicon substrate of the second wafer.
Claims20
A semiconductor structure comprising a layer arrangement consisting of, in sequence, a semiconductor-on-insulator layer (SOI) over a buried oxide (BOX) layer over a buried stressor (BS) layer with a silicon bonding layer (BL) intervening between the BOX and the BS layers.
A method for forming a semiconductor structure with a buried stressor (BS) layer having a bonding layer (BL) at its surface, the method comprising:
- forming the BS layer on a substrate of a first wafer;
- growing the BL layer at the surface of the BS layer;
- and
- wafer bonding the first wafer to a second wafer having a silicon oxide layer formed on a silicon substrate such that the silicon oxide layer of the second wafer is bonded to the BL layer of the first wafer.
Dependencies are inferred from the claim text.