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US 2017/0323972 A1Published application
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
AssigneeIntel Corporation
InventorsRobert S. CHAU, Suman DATTA, Jack KAVALIEROS, Justin K. BRASK, Mark L. DOCZY, Matthew METZ
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Abstract
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
Claims20
A transistor comprising:
- a gate dielectric layer formed over a substrate;
- a gate electrode formed on the gate dielectric layer;
- and
- a pair of source/drain regions on opposite sides of the gate electrode, the pair of source/drain regions comprising a doped semiconductor film comprising a material selected from the group consisting of InSb, InAs, InP and InGaAs;
- and wherein the semiconductor film is doped to a p type conductivity with a carbon (C), a cadmium (Cd), a zinc (Zn), or a chromium (Cr) dopant.
2 more elements
A transistor comprising:
- a substrate comprising a body having a top surface opposite a bottom surface and a pair of sidewalls;
- a gate dielectric layer on the body along the top surface and the pair of sidewalls of the body;
- a gate electrode on the gate dielectric layer along the top surface and the pair of sidewalls of the body;
- and
- a pair of non-planar source/drain regions on the body on opposite sides of the gate electrode, the pair of non-planar source/drain regions comprising an in situ doped semiconductor film comprising a material selected from the group consisting of InSb, InAs, InP and InGaAs, wherein the semiconductor film is doped to a p type conductivity with a carbon (C), a cadmium (Cd), a zinc (Zn), or a chromium (Cr) dopant.
2 more elements
Dependencies are inferred from the claim text.