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US 2017/0323971 A1Published application
Finfet device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Chien-Tai Chan, Ziwei Fang, Kei-Wei Chen, Huai-Tei Yang
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Abstract
A FinFET device and a method of forming the same are disclosed. In accordance with some embodiments, a FinFET device includes a substrate having at least one fin, a gate stack across the at least one fin, a strained layer aside the gate stack and a silicide layer over the strained layer. The strained layer has a boron surface concentration greater than about 2E20 atom/cm3 within a depth range of about 0-5 nm from a surface of the strained layer.
Claims20
A FinFET device, comprising:
- a substrate having at least one fin;
- a gate stack across the at least one fin;
- a strained layer aside the gate stack and having a boron surface concentration greater than about 2E20 atom/cm3 within a depth range of about 0-5 nm from a surface of the strained layer;
- and
- a silicide layer over the strained layer.
2 more elements
A FinFET device, comprising:
- a substrate having at least one fin;
- a gate stack across the at least one fin;
- a strained layer aside the gate stack;
- and
- a shallow doped region in a surface portion of strained layer, wherein a concentration of the shallow doped region is higher than a concentration of the strained layer, and the shallow doped region and the strain layer have a same conductivity type dopant.
2 more elements
A FinFET device, comprising:
- a substrate having at least one fin;
- a metal gate stack across the at least one fin;
- a source and drain region aside the metal gate stack;
- a lightly doped region between the source and drain region and the metal gate stack;
- and
- a shallow doped region in surface portions of the source and drain region and the lightly doped region,
- wherein the source and drain region, the shallow doped region and the lightly doped region have a same conductivity type dopant;
- and
- wherein a concentration of the shallow doped region is higher than a concentration of the source and drain region below the shallow doped region.
6 more elements
Dependencies are inferred from the claim text.