Sgt-including pillar-shaped semiconductor device and method for producing the same
AssigneeUnisantis Electronics Singapore Pte. Ltd.
InventorsFujio MASUOKA, Nozomu HARADA
Life of this patent
Estimating the term…
Abstract
A first contact hole is formed so as to extend to a NiSi layer as a lower wiring conductor layer connecting to an N+ layer of an SGT formed within a Si pillar, and so as to extend through a NiSi layer as an upper wiring conductor layer connecting to a gate TiN layer, and a NiSi layer as an intermediate wiring conductor layer connecting to an N+ layer. A second contact hole is formed so as to extend to the NiSi layer, and surround, in plan view, the first contact hole. An insulating SiO2 layer is formed on a side surface of the NiSi layer. A wiring metal layer in the contact holes connects the NiSi layer and the NiSi layer to each other.
Claims11
An SGT-including pillar-shaped semiconductor device comprising:
- at least one surrounding gate transistor (SGT) including a semiconductor pillar formed on a substrate so as to be perpendicular to a surface of the substrate;
- a gate insulating layer formed so as to surround an outer periphery of the semiconductor pillar;
- a gate conductor layer formed so as to surround the gate insulating layer;
- a first impurity region formed within the semiconductor pillar and functioning as a source;
- and a second impurity region formed within the semiconductor pillar and functioning as a drain;
- a first wiring conductor layer and at least one second wiring conductor layer present above the first wiring conductor layer that individually connect to any one of the gate conductor layer, the first impurity region, and the second impurity region of the at least one SGT, that extend in a horizontal direction along the surface of the substrate, and that at least partially overlap in plan view;
- an interlayer insulating layer present between the first wiring conductor layer and the at least one second wiring conductor layer;
- a tubular insulating film whose bottom portion is in contact with the first wiring conductor layer, and whose side surface is in contact with the at least one second wiring conductor layer and the interlayer insulating layer;
- and
- a lead-out conductor layer formed so as to fill the tubular insulating film and connect to the first wiring conductor layer.
A method for producing an SGT-including pillar-shaped semiconductor device, the method comprising:
- a stack structure-providing step of providing a stack structure including
- at least one semiconductor structure including a semiconductor pillar formed on a substrate so as to be perpendicular to a surface of the substrate, a gate insulating layer formed so as to surround an outer periphery of the semiconductor pillar, a gate conductor layer formed so as to surround the gate insulating layer, a first impurity region formed within the semiconductor pillar, and a second impurity region formed within the semiconductor pillar,
- a first wiring conductor layer and at least one second wiring conductor layer present above the first wiring conductor layer that individually connect to any one of the gate conductor layer, the first impurity region, and the second impurity region of the at least one semiconductor structure, that extend in a horizontal direction along the surface of the substrate, and that at least partially overlap in plan view, and
- an interlayer insulating layer present between the first wiring conductor layer and the at least one second wiring conductor layer;
- a contact hole formation step of forming a contact hole so as to extend to an upper surface of or into the first wiring conductor layer, so as to extend through the at least one second wiring conductor layer or be in contact with the at least one second wiring conductor layer, and so as to extend through the interlayer insulating layer or be in contact with the interlayer insulating layer;
- a tubular insulating film formation step of forming a tubular insulating film on a side surface of the stack structure except for an exposed surface of the first wiring conductor layer, the side surface being in the contact hole;
- and
- a lead-out conductor layer formation step of forming a lead-out conductor layer within the contact hole so as to connect to the exposed surface of the first wiring conductor layer.
Dependencies are inferred from the claim text.