Semiconductor device and method of manufacture
AssigneeSemiconductor Components Industries, LLC
InventorsMarian KURUC, Juraj VAVRO
Life of this patent
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Abstract
In one embodiment, an IGBT is formed to include a region of semiconductor material. Insulated gate structures are disposed in region of semiconductor material extending from a first major surface. An n-type field stop region extends from a second major surface into the region of semiconductor material. A p+ type polycrystalline semiconductor layer is disposed adjacent to the field stop region and provides an emitter region for the IGBT. An embodiment may include a portion of the p+ type polycrystalline semiconductor being doped n-type.
Claims20
A method for forming a semiconductor device comprising:
- providing a first substrate having a first major surface and a second major surface opposed to the first major surface, a first doped region of a first conductivity type extending from the first major surface into the first substrate;
- and a polycrystalline semiconductor layer adjacent to the first major surface;
- providing a second substrate having a dielectric layer disposed proximate to an outer surface;
- attaching the second substrate to the first substrate such that the dielectric layer adjoins the polycrystalline semiconductor layer;
- forming insulated trench gate electrode structures extending inward from the second major surface of the first substrate;
- removing the second substrate to expose at least a portion of the dielectric layer;
- removing at least a portion of the dielectric layer to expose at least a portion of the polycrystalline semiconductor layer;
- doping the polycrystalline semiconductor layer with a dopant of a second conductivity type;
- and
- forming a first electrode layer electrically coupled to the polycrystalline semiconductor layer, wherein the polycrystalline semiconductor layer provides an emitter region for the semiconductor device.
A semiconductor device comprising:
- a region of semiconductor material having a first major surface and a second major surface opposed to the first major surface;
- insulated gate electrode structures adjacent to the second major surface;
- a field stop region of a first conductivity type extending from the first major surface into the region of semiconductor material;
- a polycrystalline semiconductor layer adjacent to the first major surface, wherein the polycrystalline semiconductor comprises a first portion of a second conductivity adjoining the first major surface, the first portion providing an emitter region for the IGBT semiconductor device;
- and
- a first electrode layer electrically coupled to the polycrystalline semiconductor layer.
A method for forming a semiconductor device comprising:
- providing a region of semiconductor material having a first major surface and a second major surface opposed to the first major surface;
- then in either order:
- forming a first doped region of a first conductivity type extending from the first major surface into the region of semiconductor material;
- forming a polycrystalline semiconductor layer adjacent to the first major surface;
- thereafter:
- forming insulated trench gate electrode structures disposed in the region of semiconductor material adjacent the second major surface;
- doping the polycrystalline semiconductor layer with a dopant of a second conductivity type to provide at least a first portion adjoining the first major surface;
- and
- forming a first electrode layer electrically coupled to the polycrystalline semiconductor layer.
Dependencies are inferred from the claim text.