Apparatus and methods of forming fin structures with sidewall liner

A microelectronic device structure comprising:

• a first portion of an epitaxial material disposed within a portion of a substrate;
• a second portion of the epitaxial material disposed adjacent a dielectric material,
• wherein a liner material is disposed between the dielectric material and the second portion;
• a third portion of the epitaxial material disposed on the second portion, wherein
• the third portion comprises a fin device structure;
• a gate oxide disposed on the fin device structure;
• and
• a gate material disposed on the gate oxide.

A microelectronic device structure comprising:

• a sub-fin structure disposed on a substrate, wherein the sub-fin structure comprises an epitaxial material, and wherein a first portion of the sub-fin structure is disposed within a portion of the substrate, and wherein a second portion of the sub-fin structure is disposed adjacent a dielectric material;
• a fin device structure disposed on the sub-fin structure, wherein the fin device structure comprises the epitaxial material;
• and
• a liner disposed between the second portion of the sub-fin structure and the dielectric material.

A method of forming a microelectronic device comprising:

• forming an epitaxial material in an opening of an isolation material disposed on a substrate, the epitaxial material comprising:
• a first portion disposed within a portion of the substrate;
• a second portion disposed adjacent the isolation material, wherein a liner material is disposed between the isolation material and the second portion;
• and
• a third portion disposed on the second portion, wherein the third portion comprises a fin device structure;
• forming a gate oxide on a channel region of the fin device structure;
• and forming a gate material disposed on the gate oxide.