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US 2017/0323953 A1Published application
Integrated strained stacked nanosheet FET
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Ramachandra Divakaruni, Juntao LI, Xin Miao
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Abstract
Transistors and methods of forming the same include forming a fin of alternating layers of a channel material and a sacrificial material. Stress liners are formed in contact with both ends of the fin. The stress liners exert a stress on the fin. The sacrificial material is etched away from the fin, such that the layers of the channel material are suspended between the stress liners. A gate stack is formed over and around the suspended layers of channel material.
Claims9
A method for forming a semiconductor device, comprising:
- forming a fin of alternating layers of a channel material and a sacrificial material;
- forming stress liners in contact with both ends of the fin, wherein the stress liners exert a stress on the fin;
- etching away the sacrificial material from the fin, such that the layers of the channel material are suspended between the stress liners;
- and
- forming a gate stack over and around the suspended layers of channel material.
2 more elements
Dependencies are inferred from the claim text.