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US 2017/0323923 A1Published application
Photon counting devices
AssigneeGeneral Electric Company
InventorJongwoo Choi
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Abstract
Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.
Claims11
A photon counting device comprising
- a direct conversion layer of at least 1 mm thickness and comprising a Group II-VI semiconductor layer of Formula I:
- A TeySe(1-y) I;
- wherein
- A is Cd, Zn, Hg, Mg, or Mn, or a combination thereof;
- and
- y ranges from 0 to 1.
3 more elements
Dependencies are inferred from the claim text.