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US 2017/0323922 A1Published application
Metal oxide interface passivation for photon counting devices
AssigneeGeneral Electric Company
InventorsJinbo Cao, Jongwoo Choi, Aharon Yakimov
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Abstract
Described herein are photon counting devices comprising direct mode detectors with improved signal to noise ratios which are suitable for use in X-ray imaging devices, and other imaging devices.
Claims21
A photon counting device comprising:
- a detector comprising;
- a Group II-VI semiconductor layer located between a cathode electrode and an anode electrode;
- and a metal oxide layer comprising a metal oxide, wherein
- the metal oxide comprises a metal that is different from metals present in the Group II-VI semiconductor layer;
- the metal oxide is selected from the group consisting of aluminum oxide (Al2O3), gallium oxide (Ga2O3), hafnium oxide (HfO2), zirconium oxide (ZrO2), magnesium oxide (MgO), and combinations thereof;
- and
- a thickness of the metal oxide layer ranges from about 0.1 nm to about 5 nm.
4 more elements
-7. (canceled)
A method for fabricating a detector comprising a Group II-VI semiconductor layer, the method comprising depositing a metal oxide layer comprising a metal oxide, between a cathode electrode and the semiconductor layer of an X-ray detector, wherein
- the metal oxide comprises a metal that is different from metals present in the Group II-VI semiconductor layer;
- the metal oxide is selected from the group consisting of Al2O3, Ga2O3, HfO2, ZrO2, MgO and combinations thereof;
- and
- a thickness of the metal oxide layer ranges from about 0.1 nm to about 5 nm.
1 more element
Dependencies are inferred from the claim text.