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US 2017/0323921 A1Published application
Solid-state image pickup device
AssigneeCanon Kabushiki Kaisha
InventorsYusuke Onuki, Yuichiro Yamashita, Masahiro Kobayashi
Life of this patent
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Abstract
A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.
Claims20
An image pickup device comprising:
- a photoelectric conversion portion including a first semiconductor region and configured to generate a charge in accordance with incident light, the first semiconductor region being of a first conductivity type;
- a charge holding portion including a second semiconductor region configured to hold the charge generated by the photoelectric conversion portion and provided in a semiconductor substrate, the second semiconductor region being of the first conductivity type;
- a floating diffusion region of the first conductivity type provided in the semiconductor substrate;
- a first transfer gate electrode provided on a region between the first semiconductor region and the second semiconductor region;
- a second transfer gate electrode provided on a region between the second semiconductor region and the floating diffusion region;
- and
- a third semiconductor region provided under the second semiconductor region and in the semiconductor substrate, the third semiconductor region being of a second conductivity type;
- a fourth semiconductor region provided under the first semiconductor region, the fourth semiconductor region being of a second conductivity type,
- wherein
- in a cross section of a pixel including the second semiconductor region, the third semiconductor region and the second transfer gate electrode, an impurity concentration at a first point within the third semiconductor region and on a first line oriented toward a depth direction of the semiconductor substrate and passing through the second semiconductor region is higher than an impurity concentration at a second point at a same depth as the first point and on a second line oriented toward the depth direction and passing through the second transfer gate electrode, and
- the third semiconductor region and the fourth semiconductor region are included in a continuous semiconductor region of the second conductivity type.
8 more elements
An image pickup device comprising:
- a photoelectric conversion portion configured to generate a charge in accordance with incident light;
- a charge holding portion including a first semiconductor region of a first conductivity type configured to hold the charge generated by the photoelectric conversion portion and provided in a semiconductor substrate;
- a floating diffusion region of the first conductivity type provided in the semiconductor substrate;
- a first transfer gate electrode provided on a region between the photoelectric conversion portion and the first semiconductor region;
- a second transfer gate electrode provided on a region between the first semiconductor region and the floating diffusion region;
- and
- a second semiconductor region of a second conductivity type provided under the first semiconductor region and in the semiconductor substrate,
- wherein
- in a cross section of a pixel including the first semiconductor region, the second semiconductor region and the second transfer gate electrode, an impurity concentration at a first point within the second semiconductor region and on a first line oriented toward a depth direction of the semiconductor substrate and passing through the first semiconductor region is higher than an impurity concentration at a second point at a same depth as the first point and on a second line oriented toward the depth direction and passing through the second transfer gate electrode at a center of the second transfer gate electrode.
6 more elements
An image pickup device comprising:
- a photoelectric conversion portion configured to generate a charge in accordance with incident light;
- a charge holding portion including a first semiconductor region of a first conductivity type configured to hold the charge generated by the photoelectric conversion portion and provided in a semiconductor substrate;
- a floating diffusion region of the first conductivity type provided in the semiconductor substrate;
- a first transfer gate electrode provided on a region between the photoelectric conversion portion and the first semiconductor region;
- a second transfer gate electrode provided on a region between the first semiconductor region and the floating diffusion region;
- and
- a second semiconductor region of a second conductivity type provided under the first semiconductor region and in the semiconductor substrate,
- wherein
- in a cross section of a pixel including the first semiconductor region, the second semiconductor region and the second transfer gate electrode, an impurity concentration at a first intersection between a first line oriented toward a depth direction of the semiconductor substrate and passing through the first semiconductor region and a third line parallel to a surface of the semiconductor substrate and passing through the second semiconductor region is higher than an impurity concentration at a second intersection between a second line oriented toward the depth direction and passing through the second transfer gate electrode at a center of the second transfer gate electrode and the third line.
6 more elements
Dependencies are inferred from the claim text.