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US 2017/0323913 A1Published application
Self-aligned back side deep trench isolation structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYimin Huang, Jhy-Jyi Sze, Alexander Kalnitsky
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Abstract
A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region and diode region is adjacent to the shallow trench isolation structure. The backside isolation structure is self-aligned with and arranged over the shallow trench isolation structure. The backside isolation structure is adjacent to the diode region.
Claims20
A pixel sensor device comprising:
- a shallow trench isolation structure;
- a diode region at least partially adjacent to the shallow trench isolation structure;
- a well region within the diode region and adjacent to the shallow trench isolation structure;
- and
- a backside isolation structure self-aligned with and arranged over the shallow trench isolation structure, the backside isolation structure is adjacent to the diode region.
2 more elements
A pixel sensor device comprising:
- a shallow trench isolation structure extending into a frontside of a semiconductor substrate;
- a polysilicon region positioned above the shallow trench isolation structure;
- a diode region adjacent to the shallow trench isolation structure;
- a well region adjacent to the shallow trench isolation structure and within the diode region;
- a source/drain region adjacent to the shallow trench isolation structure and within the well region;
- and
- a backside isolation structure self-aligned with and arranged over the shallow trench isolation structure, the backside isolation structure is adjacent to the diode region, and a backside of the backside isolation structure is coplanar with a backside of the semiconductor substrate.
4 more elements
A pixel sensor device comprising:
- a semiconductor substrate having a substrate thickness as measured between a frontside of the substrate and a backside of the substrate;
- a gate disposed over the frontside of the substrate and configured to selectively transfer charge which is stored by a photodiode arranged in the substrate;
- a shallow trench isolation structure made of a first dielectric material extending into the frontside of the substrate;
- and
- a backside isolation structure self-aligned with and arranged under the shallow trench isolation structure, wherein a bottom surface of the backside isolation structure is coplanar with the backside of the substrate.
2 more elements
Dependencies are inferred from the claim text.