US 2017/0323906 A1 · DISPLAY DEVICE

Abstract

The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display area in which pixels are formed. The pixels include a first TFT made of a TAOS. The drain of the first TFT is formed of first LTPS 112. The source of the first TFT is formed of second LTPS 113. The first LTPS 112 is connected to a first electrode 106 via a first through-hole 108 formed in an insulating film 105 covering the first TFT. The second LTPS 113 is connected to a second electrode 107 via a second through-hole 108 formed in the insulating film 105 covering the first TFT.

Claims16

Dependent claims

A display device comprising a substrate having a display area in which pixels are formed, wherein

the pixels include a first TFT made of an oxide semiconductor,
the drain of the first TFT is formed of first polysilicon,
the source of the first TFT is formed of second polysilicon,
the first polysilicon is connected to a first electrode via a first through-hole formed in an insulating film covering the first TFT, and l
the second polysilicon is connected to a second electrode via a second through-hole formed in the insulating film covering the first TFT.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/479,392Filed 5 Apr 2017

Priority

JP 2016-0930716 May 2016

Published

9 Nov 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 30/6756
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate: amorphous oxide semiconductors
H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks
G02F 1/136227
Active matrix addressed cells: through-hole connection of the pixel electrode to the active element through an insulation layer
G02F 1/1368
Active matrix addressed cells: in which the switching element is a three-electrode device

Abstract

Facts

Application

15/479,392Filed 5 Apr 2017

Priority

JP 2016-0930716 May 2016

Published

9 Nov 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 30/6756
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate: amorphous oxide semiconductors
H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks
G02F 1/136227
Active matrix addressed cells: through-hole connection of the pixel electrode to the active element through an insulation layer
G02F 1/1368
Active matrix addressed cells: in which the switching element is a three-electrode device

Display device

Life of this patent

Abstract

Claims16

Display device

Life of this patent

Abstract

Claims16