Layout pattern for static random access memory

A layout pattern of a static random access memory, comprising:

• a first inverter and a second inverter cross-coupled for data storage, each inverter including a pull-up device (PL1) and a pull-down devices (PD1);
• each inverter comprising a J-shaped gate structure disposed on a substrate, the J-shaped gate structure comprising a first part and a second part arranged along a first direction, and a bridge part connected to the first part and the second part, the bridge part is arranged along a second direction, wherein the first direction is perpendicular to the second direction, and wherein the first part crosses over a first fin structure, and the second part crosses over a second fin structure to form the pull-down device (PD1), wherein the first part crosses over a third fin structure to form the pull-up device (PL1);
• each inverter has an inverter output, the inverter output connecting a first pass gate device (PG1) disposed on the substrate, the gate of the first pass gate device and the second part of the J-shaped gate structure being arranged along a same direction and comprising a same symmetry axis, wherein the gate of the first pass gate device crosses over a forth fin structure to form the first pass gate device (PG1);
• and
• each inverter output comprising an extending structure disposed between the first part and the second part of the J-shaped gate structure, and disposed between the first part and the gate of the first pass gate device, wherein the bridge part of the J-shaped gate structure is not overlapped with the extending structure.

A layout pattern of a static random access memory, comprising:

• a first inverter and a second inverter cross-coupled for data storage, each inverter including a pull-up device (PL1) and a pull-down devices (PD1);
• each inverter comprising a J-shaped gate structure disposed on a substrate, the J-shaped gate structure comprising a first part and a second part arranged along a first direction, and a bridge part connected to the first part and the second part, the bridge part is arranged along a second direction, wherein the first direction is perpendicular to the second direction, and wherein the first part crosses over a first diffusion region, and the second part crosses over a second diffusion region to form the pull-down device (PD1), wherein the first part crosses over a third diffusion region to form the pull-up device (PL1);
• each inverter has an inverter output, the inverter output connecting a first pass gate device (PG1) disposed on the substrate, the gate of the first pass gate device and the second part of the J-shaped gate structure being arranged along a same direction and comprising a same symmetry axis, wherein the gate of the first pass gate device crosses over a forth diffusion region to form the first pass gate device (PG1);
• and
• each inverter output comprising an extending structure disposed between the first part and the second part of the J-shaped gate structure, and disposed between the first part and the gate of the first pass gate device, wherein the bridge part of the J-shaped gate structure is not overlapped with the extending structure.