Semiconductor devices and methods of forming semiconductor devices

A semiconductor device comprising:

• a substrate;
• a plurality of cell conductive lines on a cell region of the substrate that comprises a plurality of active regions;
• a stack of first and second insulating materials on a region of the substrate that is spaced apart from the plurality of active regions, wherein the first and second insulating materials comprise different respective insulating materials;
• first and second spacers extending from respective opposing sidewalls of the first insulating material to at least portions of respective opposing sidewalls of the second insulating material;
• and
• a conductive line on the first and second spacers.

A semiconductor device comprising:

• a substrate;
• a cell conductive line on a cell region of the substrate;
• a stack of first and second insulating materials on a region of the substrate that is adjacent the cell region, wherein the cell conductive line comprises first and second layers of the second insulating material;
• a pair of spacers on the stack, wherein an uppermost surface of one of the spacers is at a first level that is between a second level of an interface of the first and second insulating materials and a third level of an uppermost surface of the second insulating material, and wherein the second level is coplanar with, or closer to a surface of the substrate than, an interface between the first and second layers of the second insulating material of the cell conductive line;
• and
• a conductive line on the stack.