Monolithically integrated semiconductor switch, particularly circuit breaker

A semiconductor switch having a first and a second monolithically integrated field effect transistor, of which one has an n-doped channel and one has a p-doped channel, in which

• a source or emitter electrode of the first field effect transistor is short circuited to a source or emitter electrode of the second field effect transistor,
• a drain or collector electrode of the first field effect transistor is connected to a first electrical terminal of the semiconductor switch, and
• a drain or collector electrode of the second field effect transistor is connected to a second electrical terminal of the semiconductor switch,
• wherein
• a well region of the second field effect transistor is short-circuited to the source or emitter electrodes of both field effect transistors,
• a well region of the first field effect transistor is short-circuited to the second electrical terminal of the semiconductor switch, and
• a gate or base electrode of the first field effect transistor is short-circuited to the first electrical terminal of the semiconductor switch and a gate or base electrode of the second field effect transistor is short-circuited to the first electrical terminal of the semiconductor switch or is arranged so as to be externally controllable.