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US 2017/0323882 A1Published application
Poly Silicon Based Interface Protection
AssigneeInfineon Technologies AG
InventorsGernot Langguth, Adrien Ille
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Abstract
A semiconductor device includes an active device of a transistor disposed in a semiconductor substrate. An isolation layer is disposed at the semiconductor substrate, and a polysilicon substrate layer is disposed over the isolation layer and the semiconductor substrate. The polysilicon substrate layer includes a semiconductor device region of an interface protection circuit of the transistor.
Claims24
A semiconductor device comprising:
- a first active device of a first transistor disposed in a first semiconductor substrate;
- a first isolation layer disposed at the first semiconductor substrate;
- and
- a first polysilicon substrate layer disposed over the first isolation layer and the first semiconductor substrate, the first polysilicon substrate layer comprising a first semiconductor device region of a first interface protection circuit of the first transistor.
1 more element
A semiconductor package comprising a first chip, wherein the first chip comprises:
- a first semiconductor substrate;
- a first polysilicon substrate layer disposed over the first semiconductor substrate;
- a first plurality of interface protection circuits disposed in the first polysilicon substrate layer;
- and
- a first plurality of bond pads, each of the first plurality of interface protection circuits associated with a corresponding one of the first plurality of bond pads.
2 more elements
19-24. (canceled)
Dependencies are inferred from the claim text.