Light emitting device

A light emitting device, comprising:

• a carrier;
• a plurality of light emitting diode chips disposed on the carrier, wherein each light emitting diode chip comprises:
• a first type semiconductor layer;
• an active layer, disposed on the first type semiconductor layer;
• a second type semiconductor layer, disposed on the active layer;
• a via hole, sequentially penetrating through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer, wherein the first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define an epitaxial structure;
• and
• a plurality of bonding pads, disposed between the epitaxial structure and a receiving substrate and comprising a first bonding pad electrically connected to the first type semiconductor layer and a second bonding pad electrically connected to the second type semiconductor layer;
• and
• a plurality of buffer pads, located on the carrier and disposed between the carrier and the second type semiconductor layers of the epitaxial structures, wherein the buffer pads are with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, the epitaxial structures are electrically bonded to the receiving substrate through the bonding pads, and a gap between any adjacent two of the buffer pads is 0.2 times to 2 times of a side length of each of the epitaxial structures.