Optoelectronic component and method of producing same

An optoelectronic component comprising:

• a composite body comprising a molded body;
• and
• an optoelectronic semiconductor chip embedded into the molded body,
• wherein an electrically conductive through contact extends from a top side of the composite body to an underside of the composite body through the molded body,
• a top side of the optoelectronic semiconductor chip is at least partly not covered by the molded body,
• the optoelectronic semiconductor chip comprises a first electrical contact on its top side,
• a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact,
• the optoelectronic component comprises an upper insulation layer extending over the first top side metallization, and
• the optoelectronic component comprises a second top side metallization arranged above the upper insulation layer and electrically insulated with respect to the first top side metallization by the upper insulation layer.

A method of producing an optoelectronic component comprising:

• providing an optoelectronic semiconductor chip comprising a first electrical contact on a top side;
• embedding the optoelectronic semiconductor chip into a molded body to form a composite body,
• wherein the top side of the optoelectronic semiconductor chip is at least partly not covered by the molded body;
• establishing an electrically conductive through contact extending from a top side of the composite body to an underside of the composite body through the molded body;
• establishing a first top side metallization on the top side of the composite body, said first top side metallization electrically conductively connecting the first electrical contact to the through contact;
• establishing an upper insulation layer extending over the first top side metallization;
• and
• establishing a second top side metallization above the upper insulation layer, said second top side metallization being electrically insulated with respect to the first top side metallization by the upper insulation layer.