Semiconductor device and manufacturing method thereof
AssigneeAmkor Technology, Inc.
InventorsKyoung Yeon Lee, Tae Yong Lee, Min Chul Shin, Se Man Oh
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device, and a method of manufacturing thereof, that comprises a substrate including a dielectric layer, at least one conductive trace and conductive bump pad formed on one surface of the dielectric layer, and a protection layer covering the at least one conductive trace and conductive bump pad, the at least one conductive bump pad having one end exposed through the protection layer, and a semiconductor die electrically connected to the conductive bump pad of the substrate.
Claims21
1-11. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- forming a mask layer on a surface, wherein the mask layer comprises a trace opening and a bump pad opening through which the surface is exposed, wherein the trace opening and the bump pad opening are separated from each other by a portion of the mask layer;
- performing a first plating process through the trace opening and the bump pad opening to form a conductive trace and a first portion of a conductive bump pad, respectively;
- filling the trace opening with a masking material;
- performing a second plating process through the bump pad opening to form a second portion of the conductive bump pad;
- removing the mask layer;
- and
- covering the conductive trace and a portion of the conductive bump pad with a dielectric layer, the conductive bump pad having one end exposed through the dielectric layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a mask layer, wherein the mask layer comprises a trace opening and a bump pad opening, wherein:
- the trace opening exposes a first portion of a seed layer, where the first portion of the seed layer is directly on and directly above a lower dielectric layer;
- and
- the bump pad opening exposes a second portion of the seed layer, where the second portion of the seed layer is directly on and directly above a lower conductive trace;
- performing a first plating process through the trace opening and the bump pad opening to form a conductive trace and a first portion of a conductive bump pad, respectively;
- filling the trace opening with a masking material;
- and
- performing a second plating process through the bump pad opening to form a second portion of the conductive bump pad.
A method of manufacturing a semiconductor device, the method comprising:
- forming a mask layer, wherein the mask layer comprises a first bump pad opening, a trace opening and a second bump pad opening, wherein at least a portion of the trace opening is directly between the first and second bump pad openings;
- performing a first plating process through the first bump pad opening, the trace opening, and the second bump pad opening to form a first portion of a first bump pad, a trace, and a first portion of a second bump pad, respectively;
- performing a second plating process on the first portion of the first bump pad to form a second portion of the first bump pad and on the first portion of the second bump pad to form a second portion of the second bump pad, without performing the second plating process on the trace,
- wherein the first bump pad comprises a lateral bump pad surface, and the lateral bump pad surface is continuous at an interface between the first and second portions of the first bump pad.
Dependencies are inferred from the claim text.