Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChih-Kai Hsu, Yu-Hsiang Hung, Wei-Chi Cheng, Ssu-I Fu, Jyh-Shyang Jenq
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming an epitaxial layer adjacent to the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a first contact hole in the ILD layer adjacent to the gate structure; and forming a cap layer in the recess, in which a top surface of the cap layer is even with or lower than a top surface of the substrate.
Claims20
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- forming an epitaxial layer adjacent to the gate structure;
- forming an interlayer dielectric (ILD) layer on the gate structure;
- forming a first contact hole in the ILD layer adjacent to the gate structure;
- and
- forming a cap layer in the recess, wherein a top surface of the cap layer is even with or lower than a top surface of the substrate.
A semiconductor device, comprising:
- a substrate;
- a gate structure on the substrate;
- an epitaxial layer in the substrate adjacent to the gate structure;
- and
- a cap layer on the epitaxial layer, wherein a top surface of the cap layer is even with or lower than a top surface of the substrate.
Dependencies are inferred from the claim text.