Method for fabricating semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• forming first gate stacks on a first region of a substrate, such that the first gate stacks are spaced apart by a first distance;
• forming second gate stacks on a second region of the substrate, such that the second gate stacks are spaced apart by a second distance greater than the first distance;
• conformally forming a spacer film along the first gate stacks, the second gate stacks, and upper surfaces of the substrate;
• and
• forming a blocking film along the first gate stacks, the second gate stacks, and the upper surfaces of the substrate, after forming the spacer film,
• wherein a thickness of the blocking film on the substrate between the first gate stacks is less than a thickness of the blocking film on the substrate between the second gate stacks,
• wherein a thickness of the blocking film on upper surfaces of the first gate stacks is greater than the thickness of the blocking film on the substrate between the first gate stacks, and
• wherein a thickness of the blocking film on upper surfaces of the second gate stacks is equal to, or greater than the thickness of the blocking film on the substrate between the second gate stacks.

A method for fabricating a semiconductor device, the method comprising:

• forming first gate stacks on a first region of a substrate, such that the first gate stacks are spaced apart by a first distance;
• forming second gate stacks on a second region of the substrate, such that the second gate stacks are spaced apart by a second distance greater than the first distance;
• forming a first blocking film along the first gate stacks and the substrate in the first region, a thickness of the first blocking film on the substrate between the first gate stacks being a first thickness;
• forming a second blocking film along the second gate stacks and the substrate in the second region, a thickness of the second blocking film on the substrate between the second gate stacks being a second thickness larger than the first thickness;
• and
• etching the substrate between adjacent first gate stacks and adjacent second gate stacks through the first blocking film and the second blocking film, respectively, to form a first recess between adjacent first gate stacks and a second recess between adjacent second gate stacks.