Method for Forming Interconnect Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
Estimating the term…
An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.
An apparatus comprising:
A device comprising:
A device comprising:
Dependencies are inferred from the claim text.