Etching method
AssigneeTokyo Electron Limited
InventorsMaju Tomura, Takayuki Katsunuma, Masanobu Honda
Life of this patent
Estimating the term…
Abstract
A method includes performing one or more times of a sequence and reducing a film thickness of a fluorocarbon-containing film formed by performing one or more times of the sequence. Each of the one or more times of the sequence includes forming the fluorocarbon-containing film on a processing target object by generating plasma of a processing gas containing a fluorocarbon gas and not containing an oxygen gas; and etching a first region with radicals of fluorocarbon contained in the fluorocarbon-containing film. In the method, an alternating repetition in which the one or more times of the sequence and the reducing of the film thickness of the fluorocarbon-containing film are alternately repeated is performed.
Claims13
A method of etching a first region containing a silicon atom and an oxygen atom selectively with respect to a second region made of a material different from the first region by performing a plasma processing on a processing target object, the processing target object including the second region in which a recess is formed, the first region which fills the recess and covers the second region, and a mask which is provided with an opening above the recess and is provided on the first region, the method comprising:
- performing one or more times of a sequence each comprising:
- forming a fluorocarbon-containing film on the processing target object by generating plasma of a processing gas containing a fluorocarbon gas and not containing an oxygen gas;
- and
- etching the first region with radicals of fluorocarbon contained in the fluorocarbon-containing film;
- and
- reducing a film thickness of the fluorocarbon-containing film,
- wherein an alternating repetition in which the performing of the one or more times of the sequence and the reducing of the film thickness are alternately repeated is performed.
Dependencies are inferred from the claim text.