Wafer profiling for etching system

A substrate etching system, comprising:

• a support to hold a wafer in a face-up orientation;
• a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense a liquid etchant onto a portion of a top face of the wafer;
• a monitoring system comprising a probe movable laterally across the wafer on the support;
• and
• a controller configured to cause the probe to move laterally across the wafer such that the monitoring system generates measurements at a plurality of different radial positions on the wafer, to receive the measurements from the monitoring system, to determine whether a processing endpoint has been reached for each zone of a plurality of zones on the wafer based on measurements from radial positions within the zone, and to cause the dispenser to stop dispensing of the liquid etchant from the delivery port upon determining that endpoint has been reached for all of the zones.

A substrate etching system, comprising:

• a support to hold a wafer in a face-up orientation;
• a reservoir for a liquid etchant bath;
• a dispenser arm movable laterally across the wafer on the support, the dispenser arm supporting a delivery port to selectively dispense liquid etchant from the bath onto a portion of a top face of the wafer;
• a monitoring system comprising a probe movable laterally across the wafer on the support;
• and
• a controller configured to cause the probe to move laterally across the wafer such that the monitoring system generates measurements at a plurality of different radial positions on the wafer, to receive the measurements from the monitoring system, to determine an etching rate from the measurements, to compare the etching rate to a target rate, and to at least one of indicate an alert to change the etchant bath or adjust a processing parameter of the etchant bath in the reservoir to reduce a variation of etching rate from the target rate.