Method of manufacturing semiconductor device and resist glass

A method of manufacturing a semiconductor device comprising an oxide film removing step where an oxide film formed on a surface of a semiconductor substrate is partially removed, wherein

• the oxide film removing step comprises:
• a first step where a resist glass layer is selectively formed on an upper surface of the oxide film without using an exposure step;
• a second step where the resist glass layer is densified by baking the resist glass layer;
• and
• a third step where the oxide film is partially removed using the resist glass layer as a mask, wherein
• the resist glass layer contains at least SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, and
• the content of SiO2 falls within a range of from 50 mol % to 65 mol %,
• the content of B2O3 falls within a range of from 8 mol % to 18 mol %,
• the content of Al2O3 falls within a range of from 4 mol % to 15 mol %,
• the content of ZnO falls within a range of from 4 mol % to 14 mol %, and
• the content of the oxide of the alkaline earth metal falls within a range of from 6 mol % to 16 mol %, and
• in the third step, the oxide film is removed by using an etchant containing a hydrofluoric acid.