Wafer bow reduction
AssigneeAnvil Semiconductors Limited
InventorPeter WARD
Life of this patent
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Abstract
We describe a method for reducing bow in a composite wafer comprising a silicon wafer and a silicon carbide layer grown on the silicon wafer. The method includes applying nitrogen atoms during the growth process of the silicon carbide layer on the silicon wafer so as to generate a compressive stress within the composite wafer.
Claims33
A method for reducing bow in a composite wafer comprising a silicon wafer and a silicon carbide epitaxial layer grown on the silicon wafer, the method comprising:
- applying nitrogen atoms during the epitaxial growth of the silicon carbide layer on the silicon wafer so as to generate a compressive stress within the composite wafer.
A method for manufacturing a composite wafer, the method comprising:
- forming a silicon wafer;
- thermally growing a silicon carbide epitaxial layer on the silicon wafer to form the composite wafer;
- and
- applying nitrogen atoms during the thermal epitaxial growth of the silicon carbide layer so as to generate a compressive stress within the composite wafer.
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A silicon carbide semiconductor structure comprising:
- a monocrystalline silicon wafer;
- a silicon carbide epitaxial layer grown on the monocrystalline silicon wafer;
- wherein the interface between the silicon wafer and the silicon carbide layer comprises nitrogen atoms which are applied during the epitaxial growth process of the silicon carbide layer so as to generate a compressive stress within the semiconductor structure.
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Dependencies are inferred from the claim text.