Method for depositing a planarization layer using polymerization chemical vapor deposition
AssigneeTokyo Electron Limited
InventorsJacques Faguet, Bruce A. Altemus, Kazuya Ichiki
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Abstract
A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.
Claims20
A method for processing a substrate, the method comprising:
- providing a substrate containing a plurality of features with gaps between the plurality of features;
- delivering precursor molecules by gas phase exposure to the substrate;
- adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules;
- and
- reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.
Dependencies are inferred from the claim text.