Short inorganic trisilylamine-based polysilazanes for thin film deposition

A silicon-containing film forming composition comprising a precursor selected from the group consisting of:

• (a) [(SiR3)2NSiH2]m—NH2-m—C≡N, with m=1 or 2;
• (b) [(SiR3)2NSiH2]n-NL3-n, with n=2 or 3;
• (c) (SiH3)2NSiH2—O—SiH2N(SiH3)2;
• and
• (d) (SiR′3)2N—SiH2—N(SiR′3)2;
• wherein
• each R is independently selected from H, a dialkylamino group having the formula —NR1R2, or an amidinate,
• Each R′ is independently selected from H, a dialkylamino group having the formula —NR1R2, or an amidinate, with the provision that all R′ are not H,
• R1 and R2 are independently selected from H or a C1-C12 hydrocarbyl group, with the provision that R1 and R2 cannot be simultaneously equal to H, and that if R1 is H, then R2 is a C2-C12 hydrocarbyl group, and NR1R2 may together form an N-containing heterocyclic ligand, and
• L is selected from H or a C1-C6 hydrocarbyl group.