FORMATION OF SiOC THIN FILMS
AssigneeASM IP Holding B.V.
InventorsToshiya Suzuki, Viljami J. Pore, Hannu Huotari
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Abstract
Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.
Claims28
A method of forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises at least one deposition cycle comprising:
- contacting a surface of the substrate with a vapor phase silicon precursor that does not comprise nitrogen;
- contacting the surface of the substrate with at least one reactive species generated by plasma formed from a second reactant comprising hydrogen, wherein the second reactant does not comprise oxygen;
- and
- optionally repeating the contacting steps until a SiOC film of a desired thickness has been formed.
A method of forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space comprising a plurality of deposition cycles, wherein at least one deposition cycle comprises:
- alternately and sequentially contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant comprising at least one reactive species comprising hydrogen;
- wherein the deposition cycle is repeated two or more times to form the SiOC thin film.
A method for depositing a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space comprising:
- contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen;
- exposing the substrate to a purge gas and/or vacuum to remove excess silicon precursor and reaction byproducts, if any;
- contacting a surface of the substrate with a second reactant comprising hydrogen, wherein the second reactant comprises at least one reactive species generated by plasma;
- exposing the substrate to a purge gas and/or vacuum to remove excess second reactant and reaction byproducts, if any;
- repeating the contacting steps until a SiOC thin film of desired thickness has been formed.
Dependencies are inferred from the claim text.