Selective Deposition Through Formation Of Self-Assembled Monolayers

A processing method comprising:

• providing a substrate with a first surface and a second surface;
• exposing the substrate to a SAM precursor to form a self-assembled monolayer on the second surface, the SAM precursor comprising a composition with a head group that adsorbs relatively quickly to the second surface and a tail group that associates with other tail groups relatively slowly through van der Waals interaction;
• depositing a film on the first surface selectively over the second surface;
• and
• removing the self-assembled monolayer from the second surface.

A processing method comprising:

• providing a substrate with a first surface and a second surface, the first surface comprises H-terminated SixGe1−x, metal, or metal oxide, and the second surface comprises hydroxyl-terminations on a Si-based dielectric;
• exposing the substrate to a SAM precursor and a co-reactant to form a self-assembled monolayer on the second surface, the SAM precursor comprising a composition with a head group that adsorbs relatively quickly to the second surface and a tail group that associates with other tail groups relatively slowly through van der Waals interaction, wherein forming the self-assembled monolayer occurs at a temperature Ttreatment, the SAM precursor is a chlorosilane and/or silylamine-based molecule with a linear, saturated hydrocarbon tail of 6-20 carbons and at least two —Cl and/or —N R2 groups, where each R is independently methyl or ethyl;
• elevating the temperature of the substrate to a temperature T greater than Ttreatment and holding the substrate at temperature T for a time;
• elevating the temperature of the substrate to a temperature TALD greater than or equal to T and depositing a film on the first surface selectively over the second surface by atomic layer deposition;
• and
• removing the self-assembled monolayer from the second surface.