Plasma poisoning to enable selective deposition
AssigneeApplied Materials, Inc.
InventorsLudovic Godet, Srinivas D. Nemani, Tobin Kaufman-Osborn
Life of this patent
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Abstract
Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.
Claims15
1-6. (canceled)
A method of performing atomic layer deposition in selected zones of a workpiece, comprising:
- depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones;
- treating said workpiece by exposure to species derived from a fluoro-carbon plasma;
- removing said first photolithographic mask;
- depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones;
- treating said workpiece by exposure to species derived from a fluoro-carbon plasma;
- removing said second photolithographic mask;
- and
- performing an atomic layer deposition process.
A method of performing atomic layer deposition in selected zones of a workpiece, comprising:
- depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones;
- treating said workpiece by exposure to species derived from a fluoro-carbon plasma;
- removing said first photolithographic mask;
- performing a first atomic layer deposition process on said workpiece;
- depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones;
- treating said workpiece by exposure to species derived from a fluoro-carbon plasma;
- removing said second photolithographic mask;
- and
- performing a second atomic layer deposition process.
A method of performing atomic layer deposition in selected zones of a workpiece having 3-dimensional structures on a surface thereof comprising vertical walls separated by trenches, comprising:
- providing a directional plasma source emitting ions along an ion propagation direction toward said workpiece;
- orienting said ion propagation direction relative to said vertical walls to enable said vertical walls to mask said selected zones from the ions emitted by said directional plasma source;
- and
- performing an atomic layer deposition process on said workpiece.
Dependencies are inferred from the claim text.