Method for Reading an EEPROM and Corresponding Device

A memory device comprising:

• a memory plane comprising a column of memory cells, a plurality of bit lines, and a plurality of word lines;
• a read amplifier configured to read the memory cells;
• and
• a controller configured to:
• pre-charge the input node of the read amplifier to a pre-charge voltage;
• select a bit line and a word line associated with a memory cell of the column of memory cells;
• and
• apply a source voltage higher than the pre-charge voltage to a source of a floating gate transistor of the memory cell to generate a read current flow from the memory cell to an input node of the read amplifier.

A method for reading a memory cell by a read amplifier, the method comprising:

• selecting a word line and a bit line of the memory cell;
• pre-charging the input node of the read amplifier and the bit line to a pre-charge voltage;
• applying a source voltage higher than the pre-charge voltage to a source node of a floating gate transistor of the memory cell, wherein a current flows from the memory cell to the read amplifier in accordance with the applying the source voltage;
• and
• reading, by the read amplifier, a logic value of a bit stored in the memory cell.