Method and System for Forming a Pattern on a Reticle Using Charged Particle Beam Lithography
AssigneeD2S, Inc.
InventorAkira Fujimura
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Abstract
A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.
Claims20
A method for fracturing or mask data preparation for charged particle beam lithography, the method comprising:
- inputting a desired substrate pattern for a substrate;
- and
- determining a plurality of charged particle beam shots that form a reticle pattern on a reticle, wherein the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern, and
- wherein the determining is performed using one or more computing hardware processors.
A method for forming a pattern on a reticle using charged particle beam lithography, the method comprising:
- inputting a desired substrate pattern for a substrate;
- determining a plurality of charged particle beam shots that form a reticle pattern on the reticle, wherein the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern;
- and
- forming the reticle pattern with the plurality of charged particle beam shots.
Dependencies are inferred from the claim text.