US 2017/0322239 A1 · VERTICAL SENSE DEVICES IN VERTICAL TRENCH MOSFET

Abstract

Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, a semiconductor device includes a main vertical trench metal oxide semiconductor field effect transistor (main-MOSFET). The main-MOSFET includes a plurality of parallel main trenches, wherein the main trenches comprise a first electrode coupled to a gate of the main-MOSFET, and a plurality of main mesas between the main trenches, wherein the main mesas comprise a main source and a main body of the main-MOSFET. The semiconductor device also includes a sense-diode. The sense-diode includes a plurality of sense-diode trenches, wherein each of the sense-diode trenches comprises a portion of one of the main trenches, and a plurality of sense-diode mesas between the source-FET trenches, wherein the sense-diode mesas comprise a sense-diode anode that is electrically isolated from the main source of the main-MOSFET.

Claims19

Dependent claims

A semiconductor device comprising:

a main vertical trench metal oxide semiconductor field effect transistor (main-MOSFET) comprising:
a plurality of parallel main trenches, wherein said main trenches comprise a first electrode coupled to a gate of said main-MOSFET;
and
a plurality of main mesas between said main trenches, wherein said main mesas comprise a main source and a main body of said main-MOSFET;
and
a sense-diode comprising:
a plurality of sense-diode trenches, wherein each of said sense-diode trenches comprises a portion of one of said main trenches;
and
a plurality of sense-diode mesas between said source-FET trenches, wherein said sense-diode mesas comprise a sense-diode anode that is electrically isolated from said main source of said main-MOSFET.

6 more elements

Dependencies are inferred from the claim text.

Vertical sense devices in vertical trench mosfet

Life of this patent

Vertical sense devices in vertical trench mosfet

Life of this patent

Abstract

Claims19