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US 2017/0321340 A1Published application
Method of electroplating tin films with indium using an alkanesulfonic acid based electrolyte
AssigneeWashington State University
InventorsIndranath Dutta, Susmriti Das Mahapatra
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Abstract
A method comprising incorporating indium into an entire Sn film for preventing the growth of whiskers from the Sn film, wherein the Sn film is applied to a metallic substrate.
Claims21
An electrolyte composition comprising:
- (a) a divalent tin salt;
- (b) a trivalent indium salt;
- and
- (c) an alkanesulfonic acid.
1 more element
The composition of claim 6, wherein the hydrogen suppressor comprises an oligomer or a polymer of ethylene oxide, or an epihalohydrin copolymer.
A method comprising:
- providing an electrolyte bath comprising (a) a divalent tin salt, (b) a trivalent indium salt, and (c) an alkanesulfonic acid;
- and
- co-electroplating tin and indium from the electrolyte bath onto a metallic substrate.
A method comprising:
- co-electrodepositing indium, tin, and at least one additional metal other than indium and tin onto a metallic substrate thereby preventing growth of whiskers from the resulting film, wherein the film is an alloy containing greater than 90 wt % Sn.
A method comprising:
- co-electrodepositing tin, indium and at least one additional metal selected from Cu, Ag, Zn, Pb, Bi, Cd, or Au onto a metallic substrate thereby preventing growth of whiskers from the resulting film.
A method comprising:
- co-electrodepositing tin and indium onto a copper lead frame thereby preventing growth of whiskers from the resulting film.
Dependencies are inferred from the claim text.