Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers

A layered structure, comprising:

• a hybrid pre-pattern disposed on a substrate, the hybrid pre-pattern comprising a top surface having a geometrical major axis;
• wherein
• the layered structure is suitable for forming a semiconductor device by self-assembly of a layer for self-assembly, designated SA layer, disposed on the top surface of the hybrid pre-pattern, wherein the SA layer has a top surface in contact with an atmosphere interface and/or a topcoat, and the SA layer comprises a material for self-assembly, designated SA material, capable of forming a phase separated lamellar domain pattern having a characteristic pitch Lo,
• the top surface of the hybrid pre-pattern comprises a) independent elevated surfaces interspersed with adjacent independent recessed surfaces and b) sidewalls joining elevated surfaces to recessed surfaces,
• material underlying the elevated surfaces of the hybrid pre-pattern has greater etch-resistance in a given etch process than material underlying the recessed surfaces of the hybrid pre-pattern,
• a given elevated surface has a width WEi defined as the length of the given elevated surface in a direction perpendicular to the major axis, wherein WEi is greater than 0 nm and subscript i of WEi is a number representing an index value denoting adjacency,
• a given adjacent recessed surface has a width WRi defined as the length of the recessed surface in a direction perpendicular to the major axis, wherein WRi is greater than 0 nm and subscript i of WRi is a number representing an index value denoting adjacency,
• WRi+WEi for a given pair of adjacent recessed and elevated surfaces is an independent sum having a value of about nLo, wherein n is an integer of 2 to about 30,
• the hybrid pre-pattern comprises a recessed surface whose WRi is greater than about 2Lo,
• the hybrid pre-pattern comprises an elevated surface whose WEi is greater than about 2Lo,
• each of the sidewalls has an independent height HN of about 0.1Lo to about 2Lo, and
• the lamellar domain pattern formed by self-assembly of the SA layer comprises alternating lamellar domains comprising respective chemically distinct components of the SA material, each of the domains comprising a plurality of lamellae,
• the elevated surfaces are neutral wetting to the alternating lamellar domains,
• the given elevated surface contacts at least one of the lamellae of each of the domains, and
• the lamellae in contact with the given elevated surface of the hybrid pre-pattern a) are oriented perpendicular to the given elevated surface, b) are in contact with the atmosphere interface and/or topcoat above the given elevated surface, and c) are aligned along the major axis of the hybrid pre-pattern.