Apparatus for controlling temperature of substrate, apparatus for treating substrate comprising the same, and method of controlling the same

A substrate treating apparatus comprising:

• a chamber for providing a substrate treating space therein;
• a substrate support assembly for supporting the substrate and placed within the chamber;
• a gas supply unit for supplying a gas within the chamber;
• a plasma generating unit for making the gas into a plasma state, and including a high-frequency power for supplying high-frequency power;
• and
• a substrate temperature control unit for controlling a temperature of the substrate,
• wherein the substrate temperature control unit comprises:
• a plurality of heating units placed in different area of the substrate and controlling a temperature of the substrate by each area;
• a power supply unit for providing a power to control the temperature of the substrate;
• a switch unit connected between the plurality of heating units and the power supply unit, and obtaining one or more of a transistor device;
• and
• a controller for controlling a power which is supplied to each heating units by controlling the switch unit.