Semiconductor device
AssigneeRenesas Electronics Corporation
InventorShunichi KAERIYAMA
Life of this patent
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Abstract
The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same.
Claims11
A semiconductor device comprising:
- a power transistor;
- a sense transistor having a gate connected to a gate of the power transistor and a collector or drain connected to a collector or drain of the power transistor;
- a first operational amplifier having a first input terminal connected to an emitter or source of the sense transistor and a second input terminal connected to an emitter or source of the power transistor;
- a resistor element having one end connected to the emitter or source of the sense transistor and another end connected to a first node;
- and
- an adjustment transistor placed between the first node and a low-voltage power supply and having a base or gate supplied with an output of the first operational amplifier,
- wherein the first operational amplifier adjusts a current flowing through the adjustment transistor so that a voltage of the emitter or source of the power transistor and a voltage of the emitter or source of the sense transistor are substantially the same.
Dependencies are inferred from the claim text.