US 2017/0317650 A1Published application

Power amplification circuit

AssigneeMurata Manufacturing Co., Ltd.

InventorKenichi SHIMAMOTO

Life of this patent

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Abstract

A power amplification circuit includes: a first amplification transistor, a first signal being input to a base or gate thereof and a second signal obtained by amplifying the first signal being output from a collector or drain thereof; and a first bias circuit that supplies a first bias current to the base or gate of the first amplification transistor. The first bias circuit includes a first transistor that outputs the first bias current from an emitter or source thereof, and a first control circuit that controls an electrical connection between the emitter or source of the first transistor and ground. The first control circuit includes a first resistance element and a first switch element, which are connected in series with each other. The first switch element is switched on in the case of a first power mode and is switched off in the case of a second power mode.

Claims17

Dependent claims

A power amplification circuit comprising:

a first amplifier that outputs a first amplified signal;
and
a first bias circuit that supplies a first bias current to the first amplifier, the bias circuit comprising:
a first transistor, wherein the first bias current is output from an emitter or source of the first transistor;
a first resistor;
and
a first switch connected in series with the first resistor,
wherein the first resistor and the first switch control an electrical connection between ground and the emitter or source of the first transistor, and
wherein the first switch is controlled in accordance with a control signal that represents a power mode of the power amplification circuit such that the first switch is closed and the emitter or source of the first transistor is connected to ground when the power amplification circuit is in a high power mode, and the first switch is open and the emitter or source of the first transistor is not connected to ground when the power amplification circuit is in a low power mode.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/649,962Filed 14 Jul 2017
Priority: JP 2015-2359832 Dec 2015
Published: 2 Nov 2017
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H03F 1/303
Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters: using a switching device
H03F 1/0261
In transistor amplifiers: with control of the polarisation voltage or current, e.g. gliding Class A
H03F 1/56
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements: modifications of…
H03F 3/19
High-frequency amplifiers, e.g. radio frequency amplifiers: with semiconductor devices only

Family

Application15/365,164Continuation · filed 30 Nov 2016
Application15/649,962Continuation
US 10,038,410 B2Related patent
US 2017/0163223 A1Published application
US 9,742,358 B2Related patent
US 2017/0317650 A1This patent

From the US filing history. Foreign family members aren’t listed.