APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN

A crucible to be employed in an apparatus for producing a SiC single crystal by a solution growth process and capable of containing a Si—C solution, the crucible comprising:

• a tubular portion including a first outer peripheral surface and an inner peripheral surface;
• and
• a bottom portion disposed at a lower end of the tubular portion and defining an inner bottom surface, wherein
• the tubular portion includes a first groove in the first outer peripheral surface, the groove extending in a direction crossing a circumferential surface of the tubular portion.

A method for producing a SiC single crystal by a solution growth process, the method comprising:

• a preparation step of preparing a SiC single crystal production apparatus comprising a crucible including a tubular portion including a first outer peripheral surface and an inner peripheral surface, and a bottom portion disposed at a lower end of the tubular portion and defining an inner bottom surface, the crucible capable of containing material for Si—C solution, a seed shaft including a bottom edge which a seed crystal is attached to, and an induction heater disposed around the tubular portion of the crucible, the induction heater configured to heat the crucible and the Si—C solution, wherein the first outer peripheral surface includes a first groove extending in a direction crossing a circumferential direction of the tubular portion;
• a formation step of heating and melting the material contained in the crucible to form the SiC solution;
• and
• a growth step of bringing the seed crystal into contact with the Si—C solution and growing the SiC single crystal on the seed crystal while heating and stirring the Si—C solution by the induction heater.